? 2008 ixys corporation, all rights reserved ds100060(10/08) v dss = 900v i d25 = 13a r ds(on) 460 m t rr 300 ns n-channel enhancement mode avalanche rated fast intrinsic diode symbol test conditions maximum ratings v dss t j = 25 c to 150 c 900 v v dgr t j = 25 c to 150 c, r gs = 1m 900 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c13a i dm t c = 25 c, pulse width limited by t jm 48 a i a t c = 25 c12a e as t c = 25 c1j dv/dt i s i dm , v dd v dss ,t j 150 c 15 v/ns p d t c = 25 c 230 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold plastic body for 10s 260 c v isol 50/60 hz, rms, 1 minute 2500 v~ f c mounting force 20..120/4.5..27 n/lb. weight 5g g = gate d = drain s = source preliminary technical information symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 1ma 900 v v gs(th) v ds = v gs , i d = 1ma 3.5 6.5 v i gss v gs = 30v, v ds = 0v 200 na i dss v ds = v dss 25 a v gs = 0v t j = 125 c 2 ma r ds(on) v gs = 10v, i d = 12a, note 1 460 m isolated tab isoplus247 e153432 IXFR24N90P polar tm power mosfet hiperfet tm fearures z silicon chip on direct-copper bond (dcb) substrate z isolated mounting surface z 2500v electrical isolation z fast intrinsic diode z avalanche rated z low package inductance advantages z low gate drive requirement z high power density applications: z switched-mode and resonant-mode power supplies z dc-dc converters z laser drivers z ac and dc motor drives z robotics and servo controls
ixys reserves the right to change limits, test conditions, and dimensions. IXFR24N90P symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 12a, note 1 10 16 s r gi gate input resistance 1.1 c iss 7200 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 490 pf c rss 60 pf t d(on) 46 ns t r 40 ns t d(off) 68 ns t f 38 ns q g(on) 130 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 12a 50 nc q gd 58 nc r thjc 0.54 c /w r thcs 0.15 c /w source-drain diode characteristic values t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0v 24 a i sm repetitive, pulse width limited by t jm 96 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 300 ns q rm 1.1 c i rm 11 a preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1: pulse test, t 300 s; duty cycle, d 2%. i f = 12a, -di/dt = 100a/ s v r = 100v, v gs = 0v isoplus247 (ixfr) outline resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 12a r g = 1 (external)
? 2008 ixys corporation, all rights reserved IXFR24N90P fig. 6. maximum drain current vs. case temperature 0 2 4 6 8 10 12 14 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 1. output characteristics @ 25oc 0 2 4 6 8 10 12 14 16 18 20 22 24 012345678910 v ds - volts i d - amperes v gs = 10v 9v 8v 7v 6v fig. 2. extended output characteristics @ 25oc 0 5 10 15 20 25 30 35 40 45 50 0 3 6 9 12 15 18 21 24 27 30 v ds - volts i d - amperes v gs = 10v 9v 7v 8v 6v fig. 3. output characteristics @ 125oc 0 2 4 6 8 10 12 14 16 18 20 22 24 0 2 4 6 8 1012141618202224 v ds - volts i d - amperes v gs = 10v 9v 7v 6v 8v 5v fig. 4. r ds(on) normalized to i d = 12a value vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 24a i d = 12a fig. 5. r ds(on) normalized to i d = 12a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 0 4 8 12162024283236404448 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc
ixys reserves the right to change limits, test conditions, and dimensions. IXFR24N90P ixys ref: f_24n90p(85)10-23-08 fig. 12. maximum transient thermal impedance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 7. input admittance 0 5 10 15 20 25 30 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 5 10 15 20 25 30 0 2 4 6 8 101214161820222426283032 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 10 20 30 40 50 60 70 80 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 2 4 6 8 10 12 14 16 0 20 40 60 80 100 120 140 160 180 q g - nanocoulombs v gs - volts v ds = 450v i d = 12a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1mhz c iss c rss c oss
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